The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β -Ga 2 O 3 nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch. Rectifying current-voltage characteristics with a rectification ratio exceeding 10 7 were obtained with a high reverse hard breakdown voltage of 135 V. This UWBG p-n heterojunction diode exhibited good thermal stability at elevated temperatures, retaining its high rectification ratio and low reverse leakage current. Excellent photoresponse characteristics, including responsivity (12 A W −1 ), rejection ratio (8.5 × 10 3 ), photo-to-dark-current ratio (3900), and fast response/decay characteristics, were observed from the diamond/<...

中文翻译：

---

金刚石/β-Ga 2 O 3的超宽带隙pn异质结，用于太阳致盲光电二极管

由于难以形成pn同质结，因此尚未充分开发超宽带隙（UWBG）半导体的潜力。在这项研究中，已经通过范德华相互作用证明了由p型金刚石衬底和n型剥落的β-Ga 2 O 3纳米层组成的UWBG pn异质结的混合维。这种类型的结构不会遭受晶格失配的困扰。在135 V的高反向硬击穿电压下，获得了整流比超过10 7的整流电流-电压特性。该UWBG pn异质结二极管在高温下表现出良好的热稳定性，保持了其高整流比和低反向漏电流。出色的光响应特性，包括响应度（12 AW -1），抑制比（8.5×10 3），