In this study, a GaN/LiNbO3 hybrid wafer was demonstrated using room-temperature bonding based on a surface activated bonding (SAB) method. The SAB using Fe-containing Ar ion beam bombardment achieved a strong bond between GaN and LiNbO3 wafers. The bonded wafer made using the modified SAB method was successfully cut into 1 × 1 mm2 dies using a dicing saw without interfacial debonding, and the measured tensile strength was estimated to be greater than approximately 26 MPa. These results show the presence of a strong bond that may be sufficient for device applications. In addition, TEM observation clearly indicated that the Fe-containing nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between the negative surface of LiNbO3 and Ga-face of GaN. These results show the potential of this room-temperature bonding method to achieve a future GaN/LiNbO3 hybrid platform that can fully exploit the unique properties of each material.

中文翻译：

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使用室温表面活化键合演示 GaN/LiNbO3 混合晶片

在这项研究中，使用基于表面活化键合 (SAB) 方法的室温键合演示了 GaN/LiNbO3 混合晶片。SAB 使用含 Fe 的 Ar 离子束轰击实现了 GaN 和 LiNbO3 晶片之间的牢固结合。使用改进的 SAB 方法制造的键合晶片成功地使用切割锯切割成 1 × 1 mm2 芯片而没有界面脱粘，并且测得的拉伸强度估计大于约 26 MPa。这些结果表明存在可能足以用于设备应用的强键。此外，TEM 观察清楚地表明，在离子束轰击过程中沉积的含铁纳米层似乎可以很好地用作粘合剂，并在 LiNbO3 的负表面和 GaN 的 Ga 面之间形成牢固的结合。