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Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-04-22 , DOI: 10.35848/1882-0786/ab88c5
Takanori Takahashi 1 , Mami N. Fujii 1 , Ryoko Miyanaga 1 , Miki Miyanaga 2 , Yasuaki Ishikawa 1, 3 , Yukiharu Uraoka 1
Affiliation  

We report the existence of a degradation mode under AC stress in high-mobility amorphous In–W–Zn–O (IWZO) thin-film transistors (TFTs). The application of gate pulse to the IWZO-TFT reduced the on-current of the transfer characteristics, increased the subthreshold swing (SS) values, and resulted in photon emission around the source and drain electrodes of the TFT. We considered that the degradation is attributed to the breaking of the weak metal-oxygen bonds by hot carriers around the electrode edges. We expect an understanding of this degradation phenomenon to contribute to the materials design toward high-mobility and high-stability oxide semiconductors.

中文翻译:

高迁移率非晶In-W-Zn-O薄膜晶体管在交流电应力下的独特降解

我们报告了在交流应力下高迁移率非晶态In-W-Zn-O(IWZO)薄膜晶体管(TFT)中存在一种降解模式。向IWZO-TFT施加栅极脉冲会降低传输特性的导通电流,增加亚阈值摆幅(SS)值,并导致TFT源电极和漏电极周围的光子发射。我们认为降解是由于电极边缘周围的热载流子破坏了弱的金属-氧键。我们希望能够了解这种降解现象,从而有助于材料设计朝着高迁移率和高稳定性的氧化物半导体方向发展。
更新日期:2020-04-23
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