Previously, the PtSe₂ has been proved to absorb light in the infrared band, but most of devices based on PtSe₂ were reported in visible light applications while few of them applied in near-infrared. In the visible band, the silicon may absorb most of the light wave, and the device does not make full use of the absorption characteristics of the PtSe₂. In our work, we form heterojunction by growing PtSe₂ film directly on silicon substrates, the PtSe₂ heterojunction has a wide response band. Zero-bias photoresponse in the heterojunctions is observed under broadband laser illumination of wavelengths from 635 to 2700 nm. The devices exhibit excellent performance, specifically, the responsivity is as high as 17.8 mAW⁻¹ at 1550 nm, the I_light/I_dark ratio, specific detectivity, and response speed are 9.2 × 10², 2.38 × 10⁹ Jones and 6/9 μs at room-temperature, respectively. The same device also responds to 635 nm wavelength, and its responsivity, specific detectivity and the I_light/I_dark ratio are 202 mAW⁻¹, 4.39 × 10¹² Jones and 1.31 × 10⁵, respectively. Furthermore, it still observes an evident response at 2700 nm wave band. With the wide-band and fast response, the PtSe₂/Si heterojunction has potential possibilities in the field of infrared and even mid-infrared photoelectric detection in the future.

以前，已经证明PtSe ₂可以吸收红外波段的光，但是据报道，大多数基于PtSe ₂的设备都在可见光应用中使用，而很少在近红外中使用。在可见光带中，硅可能吸收大部分的光波，并且该器件无法充分利用PtSe ₂的吸收特性。在我们的工作中，我们通过不断增长的PTSE形成异质结₂膜直接在硅衬底上的PTSE ₂异质结具有较宽的响应范围。在波长为635至2700 nm的宽带激光照射下，观察到异质结中的零偏光响应。这些器件表现出优异的性能，具体地，响应度高达17.8 MAW ^-1在1550nm处，该I_光/ I_暗比，比探测，和响应速度是9.2×10 ²，2.38×10个⁹ Jones和6 /在室温下分别为9μs。相同的设备也响应波长635nm，并且其响应度，比探测和I_光/ I_暗比是202 MAW ^-1，4.39×10个^12个Jones和1.31×10 ⁵， 分别。此外，它仍然在2700 nm波段观察到明显的响应。PtSe ₂ / Si异质结具有宽带和快速响应的特性，将来在红外甚至中红外光电检测领域具有潜在的可能性。