We grew 500-nm-thick lightly As-doped n-BaSi2 epitaxial films at 600 °C by molecular beam epitaxy, and supplied atomic H in durations (t BaSi:H) of 0–30 min, followed by capping with a 3-nm-thick amorphous Si layer at 180 °C. The photoresponsivity of the BaSi2 films was enhanced by approximately five times by As doping. Deep-level transient spectroscopy measurement revealed the disappearance of two previously reported electron traps. The photoresponsivity was further enhanced by approximately six times after H supply. It reached a maximum at t BaSi:H = 1–10 min, owing to the reduction of defects.

中文翻译：

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通过原子氢钝化显着提高掺砷 n-BaSi ₂外延膜的光响应性

我们通过分子束外延在 600 °C 下生长了 500 nm 厚的轻掺砷 n-BaSi2 外延膜，并在 0-30 分钟的持续时间 (t BaSi:H) 内提供原子 H，然后用 3- nm 厚的非晶硅层，温度为 180 °C。通过 As 掺杂，BaSi2 薄膜的光响应性提高了大约五倍。深能级瞬态光谱测量揭示了两个先前报道的电子陷阱的消失。在 H 供应后，光响应性进一步提高了大约六倍。由于缺陷的减少，它在 t BaSi:H = 1-10 分钟时达到最大值。