Abstract The optical anisotropy of zinc-blende type-II GaAsSb/GaAs quantum wells (QWs) with (110) crystal orientation was investigated by using the multiband effective-mass theory. The optical matrix element for the y ′ ([1 1 0])-polarization rapidly decreases with increasing in-plane wave vector. On the other hand, in the case of the x ′ ([001])-polarization, the optical matrix element is nearly independent of the in-plane wave vector. The optical anisotropy gradually increases with increasing carrier density. This can be explained by the fact that, at a higher carrier density, carriers occupy higher states above k | | =0 and the optical matrix element for the x ′ -polarization becomes larger than that for the y ′ -polarization at high k | | .

中文翻译：

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II 型 (110) 取向 GaAsSb/GaAs 量子阱的光学各向异性

摘要 利用多能带有效质量理论研究了具有(110)晶向的闪锌矿II型GaAsSb/GaAs量子阱(QW)的光学各向异性。y ' ([1 1 0]) 偏振的光学矩阵元素随着面内波矢量的增加而迅速减小。另一方面，在 x ' ([001]) 偏振的情况下，光学矩阵元素几乎与面内波矢量无关。随着载流子密度的增加，光学各向异性逐渐增加。这可以通过以下事实来解释：在更高的载流子密度下，载流子占据高于 k | 的更高状态。| =0 并且在高 k 时 x ' 偏振的光学矩阵元素变得大于 y ' 偏振的光学矩阵元素 | | .