The fabrication and characterization of an ultra-low power current sensor utilizing magnetoelectric lead zirconate titanate/nickel zinc ferrite (PZT-NZF) nanowires is presented. Low-cost, low-temperature, and post-CMOS-compatible fabrication methods were utilized in the fabrication of a nanowire array. This array was electrically and mechanically flip-chip bonded onto a printed circuit board (PCB) with a current trace. The PCB also contained a low-power amplification circuit to provide buffering and a gain of 10. Characterization of the sensor up to 70 mA showed a sensitivity of 3.24 mV/mA, sensitivity error of 1.16%, nonlinearity of 4%, noise floor of < 2 mA, and noise density of 8.4 nA Hz−1/2 at 1kHz. Lastly the only power consumption necessary for device operation was the power required for a low power op amp, 0.225 mW.

中文翻译：

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利用磁电纳米线的超低功耗电流传感器

介绍了利用磁电锆钛酸铅/镍锌铁氧体 (PZT-NZF) 纳米线的超低功率电流传感器的制造和表征。在纳米线阵列的制造中使用了低成本、低温和后 CMOS 兼容的制造方法。该阵列通过电气和机械倒装芯片焊接到带有电流迹线的印刷电路板 (PCB) 上。PCB 还包含一个低功率放大电路以提供缓冲和 10 的增益。高达 70 mA 的传感器表征显示灵敏度为 3.24 mV/mA​​，灵敏度误差为 1.16%，非线性为 4%，本底噪声为< 2 mA，1kHz 时的噪声密度为 8.4 nA Hz−1/2。最后，设备运行所需的唯一功耗是低功率运算放大器所需的功率，0.225 mW。