In III-Nitride planar photosensitive devices (PSDs), proper engineering in polarization charges (PCs) are required in order to reduce detrimental effects on the devices. In this work, piezo-phototronic effects of PSDs are explored, giving more emphasis on photovoltaic application. The polarization effects of GaN/InxGa1–xN multiple quantum wells on planar solar cell with {000-1} or {0001} as one of the facets are intensively studied through numerical simulations. Analysis of PCs both in simulation and theoretical model at different facets of solar cell with different ‘In’ compositions are considered carefully. It is observed that planar PSDs with reversed polar {000-1} facet is good enough to enhance the carrier dynamics of solar cell in quasi neutral region as compared to normal polarization {0001} facet. This numerical study provides an innovative aspect of implementation of fundamental device physics with respect to recent growth techniques in order to realize the application of III-Nitride PSDs towards photovoltaic applications. The effect of GaN/InxGa1–xN layer with different ‘In’ compositions in all crystallographic orientations of planar solar cell are also discussed. A conversion efficiency of 21% with 74% fill factor is achieved from strain modulated four quantum well based solar cell considering 10% of ‘In’ content under one sun AM1.5G illumination.

中文翻译：

---

应变调制多量子阱对 III 族氮化物光敏器件载流子动力学和光谱灵敏度的影响

在 III 族氮化物平面光敏器件 (PSD) 中，需要对极化电荷 (PC) 进行适当的设计，以减少对器件的不利影响。在这项工作中，探索了 PSD 的压电光电效应，更加重视光伏应用。通过数值模拟深入研究了GaN/InxGa1-xN多量子阱对以{000-1}或{0001}为晶面之一的平面太阳能电池的极化效应。仔细考虑了对具有不同“In”成分的太阳能电池不同方面的模拟和理论模型中 PC 的分析。据观察，与正常极化 {0001} 面相比，具有反向极性 {000-1} 面的平面 PSD 足以增强准中性区太阳能电池的载流子动力学。该数值研究提供了实现基本器件物理与近期生长技术相关的创新方面，以实现 III 族氮化物 PSD 在光伏应用中的应用。还讨论了具有不同“In”成分的 GaN/InxGa1-xN 层在平面太阳能电池的所有晶体取向中的影响。考虑到在一次太阳 AM1.5G 光照下 10% 的“In”含量，基于应变调制的四量子阱太阳能电池实现了 21% 的转换效率和 74% 的填充因子。还讨论了具有不同“In”成分的 GaN/InxGa1-xN 层在平面太阳能电池的所有晶体取向中的影响。考虑到在一个太阳 AM1.5G 光照下 10% 的“In”含量，应变调制四量子阱太阳能电池实现了 21% 的转换效率和 74% 的填充因子。还讨论了具有不同“In”成分的 GaN/InxGa1-xN 层在平面太阳能电池的所有晶体取向中的影响。考虑到在一次太阳 AM1.5G 光照下 10% 的“In”含量，基于应变调制的四量子阱太阳能电池实现了 21% 的转换效率和 74% 的填充因子。