Wide band gap (WBG) semiconductors are delivering on the promise of higher power and energy density circuits. In doing so, they are also opening an opportunity for a new generation of dielectric materials. Researchers from the University of Texas at Austin organized a 1.5 day workshop on "Next-generation dielectric materials for microelectronics/electrical applications" at the Massachusetts Institute Technology on December 4–5, 2019 focusing on this emerging opportunity. The invitation-only workshop brought together the materials researchers with those attempting to improve power electronics (PE) packaging to compare information that would accelerate the field (Figure 1).

中文翻译：

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新兴电气环境的新材料——研讨会报告

宽带隙 (WBG) 半导体正在兑现更高功率和能量密度电路的承诺。在这样做的过程中，它们也为新一代介电材料提供了机会。德克萨斯大学奥斯汀分校的研究人员于 2019 年 12 月 4 日至 5 日在麻省理工学院组织了为期 1.5 天的“用于微电子/电气应用的下一代介电材料”研讨会，重点关注这一新兴机遇。仅限受邀参加的研讨会将材料研究人员与试图改进电力电子 (PE) 封装的研究人员聚集在一起，以比较将加速该领域发展的信息（图 1）。