Herein, as one of bias‐dependent channel leakage issues in p‐channel multilayered molybdenum ditelluride field‐effect transistors (m‐MoTe₂ FETs), anomalous increase in off‐state current is reproducibly observed with increase in drain‐to‐gate voltage (V_DG), even after hydrophobic, cyclic transparent optical polymer (CYTOP) encapsulation. For elucidation on the behind mechanism for the phenomena, drain‐ and gate‐bias dependent channel leakage currents are systematically analyzed in the range of temperature 100 to 380 K. Surprisingly, analysis on trap‐assisted indirect tunneling current substantiates that the off‐state current is mainly attributed to gate‐induced drain leakage (GIDL) current associated with band bending in m‐MoTe₂ FETs. Moreover, linear slope (0.00163) of ln (I_DS/F) versus F^1/2 plot and its coincidence with theoretical value (0.00148) identify that thermal emission associated with Poole–Frenkel effect is strongly involved at low drain bias of −1.1 V (e.g., effective barrier height, ϕ_B ≈ 0.61 eV), whereas GIDL current becomes more predominant at high drain bias of −3.1 V (ϕ_B ≈ 0.51 eV). Thus, in‐depth understanding on the origin of anomalous leakage current and its systematic validation would be beneficial for the development of novel devices and circuits based on transition metal chalcogenides (TMDCs).

中文翻译：

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多层MoTe2场效应晶体管中的断态电流的起源：栅极引起的漏极泄漏和Poole-Frenkel传导

在此，作为p沟道多层二碲化钼场效应晶体管（m-MoTe ₂ FET）中与偏置有关的沟道泄漏问题之一，可以观察到随着漏极到栅极电压的增加，截止状态电流异常增加（V _DG），即使在疏水，环状透明光学聚合物（CYTOP）封装后也是如此。为了阐明现象的背后机理，系统地分析了在100至380 K温度范围内与漏极和栅极偏置相关的沟道泄漏电流。令人惊讶的是，对陷阱辅助间接隧穿电流的分析证实了断态电流主要归因于与m-MoTe _2中的能带弯曲相关的栅极感应漏极泄漏（GIDL）电流场效应管。此外，ln（I _DS / F）相对于F ^1/2图的线性斜率（0.00163）及其与理论值（0.00148）的吻合表明，在-1.1的低漏极偏置下，与Poole-Frenkel效应相关的热辐射是很重要的V（例如，有效的势垒高度，φ_乙 ≈0.61电子伏特），而GIDL电流变为-3.1 V（高漏极偏压更加突出φ_乙 ≈0.51电子伏特）。因此，对异常泄漏电流的起源及其系统验证的深入了解将有助于开发基于过渡金属硫属化物（TMDC）的新型器件和电路。