A modeling theory is developed to predict the performance of piezoresistors which incorporate Schottky diode electrical contacts. This new theory allows the design of high performance gauges which can be fabricated using Non-Lithographically-Based Microfabrication (NLBM) techniques. These semiconductor piezoresistors can be designed in customizable sizes and fabricated in parallel in order to integrate position sensing into MEMS flexural positioners. Customizable sensing for nanopositioning platforms will enable advances in a range of nano-scale fabrication and metrology applications. A semiconductor piezoresistor with Schottky diode contacts was fabricated and attached to a titanium flexure. This device is shown to match predicted electrical performance within about 8% and to show a gauge factor of 116, within 2% of the predicted value. Optimized performance limits for Schottky diode semiconductor piezoresistors are identified to be about 127 dB full noise dynamic range for a quarter bridge over a 10 kHz sensor bandwidth on a 600 μm width titanium flexure, making them ideal for sensing on meso-/micro-scale flexural positioners. Methods are suggested for achieving the performance limits indicated above and the impact of these methods on the sensor dynamic range are studied.

开发了一种建模理论来预测结合了肖特基二极管电触点的压敏电阻的性能。这一新理论允许设计高性能仪表，该仪表可以使用基于非光刻的微制造（NLBM）技术制造。这些半导体压阻器可以按可定制的尺寸设计并并行制造，以便将位置感应集成到MEMS挠性定位器中。纳米定位平台的可定制传感将推动一系列纳米级制造和计量应用的发展。制作了具有肖特基二极管触点的半导体压敏电阻，并将其连接到钛挠曲件上。该设备显示出与预计的电气性能相匹配的大约8％，并显示出116的规格系数，与预计值的2％之内。肖特基二极管半导体压敏电阻的最佳性能极限被确定为在600μm宽度的钛挠性件上，在10 kHz传感器带宽上四分之一电桥的四分之一桥的全噪声动态范围约为127 dB，使其成为感测中/微米挠性的理想选择定位器。建议了达到上述性能极限的方法，并研究了这些方法对传感器动态范围的影响。