This paper presents a D-band (110–170 GHz) transmitter/receiver (Tx/Rx) chipset with end-fire on-chip antennas (OCAs) using 0.13-μm SiGe BiCMOS technology. The input LO signal frequency of the chipset is 31.25 GHz. A 62.5-GHz frequency doubler, a D-band 2nd-harmonic up-conversion mixer, a power amplifier (PA), and an end-fire antenna are integrated in the Tx. An end-fire antenna, a D-band low-noise amplifier (LNA), a 2nd-harmonic down-conversion mixer, and a 62.5-GHz frequency doubler are integrated in the Rx. The end-fire OCA has gain and efficiency of 4.1 dBi and 83%, respectively. Maximum measured effective isotropic radiation power (EIRP) of 9.2 dBm and conversion gain of 21 dB are achieved for the Tx and Rx, respectively. The Tx/Rx are packaged on PCBs through wire bonding and chip-to-chip wireless communication using 16QAM modulation with the data rate of 4 Gb/s is demonstrated. The DC power consumption of the whole chip is ~1150 mW, and the total chip size is 2 × 3.5 mm².

中文翻译：

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具有0.13μmSiGe BiCMOS技术的端射片上天线的D波段发射器/接收器芯片组

本文介绍了一种采用0.13μmSiGe BiCMOS技术的端发射片上天线（OCA）的D波段（110-170 GHz）发射器/接收器（Tx / Rx）芯片组。芯片组的输入LO信号频率为31.25 GHz。Tx中集成了一个62.5 GHz倍频器，一个D波段2次谐波上变频混频器，一个功率放大器（PA）和一个端射天线。Rx中集成了端射天线，D波段低噪声放大器（LNA），第二谐波下变频混频器和62.5 GHz倍频器。端射OCA的增益和效率分别为4.1 dBi和83％。对于Tx和Rx，分别获得的最大测得的有效各向同性辐射功率（EIRP）为9.2 dBm，转换增益为21 dB。Tx / Rx通过引线键合封装在PCB上，并演示了使用16QAM调制的芯片到芯片无线通信，数据速率为4 Gb / s。整个芯片的直流功耗为〜1150 mW，芯片总尺寸为2×3.5 mm²。