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Direct Monte-Carlo simulation of dry e-beam etching of resist
Microelectronic Engineering ( IF 2.3 ) Pub Date : 2020-04-01 , DOI: 10.1016/j.mee.2020.111313
F. Sidorov , A. Rogozhin , M. Bruk , E. Zhikharev

Abstract Novel model of e-beam interaction with PMMA, based on Direct Monte-Carlo simulation algorithm, is presented. It takes into account valence bond structure in PMMA monomers and could be easily applied for the study of e-beam-induced PMMA at higher temperatures due to various PMMA degradation pathways. The model was verified by the simulation of changes in PMMA molecular weight distribution and comparison of simulated and experimental G(S) values for e-beam irradiation of PMMA. Simulation algorithm of dry e-beam etching of resist (DEBER) is provided, including simulation of most significant processes: e-beam-induced PMMA degradation above glass transition, PMMA chain depropagation with subsequent released monomer diffusion and structure profile melting due to low PMMA viscosity at higher temperatures. Only 70% of DEBER profile depth is expected to be caused by monomer evacuation from the specimen, while the remaining 30% are supposed to be a result of PMMA swelling. Simulation of DEBER profile obtained by PMMA exposure at 160 °C in series of parallel lines was carried out. PMMA chain scissions are suggested to originate from ionization events on C–С backbone atoms and hydrogen abstraction. PMMA zip length at 160 °C was determined from the comparison of simulated and experimental profiles and comprised 3400. Experimental DEBER profiles were reproduced basing on the assumption of gaussian profile nature.

中文翻译:

光刻胶干法电子束蚀刻的直接蒙特卡罗模拟

摘要 提出了一种基于直接蒙特卡罗模拟算法的电子束与PMMA相互作用的新模型。它考虑了 PMMA 单体中的价键结构,并且由于各种 PMMA 降解途径,可以很容易地应用于在较高温度下研究电子束诱导的 PMMA。该模型通过 PMMA 分子量分布变化的模拟以及 PMMA 电子束辐照的模拟和实验 G(S) 值的比较得到验证。提供了光刻胶干法电子束蚀刻 (DEBER) 的模拟算法,包括对最重要过程的模拟:电子束诱导的 PMMA 在玻璃化转变以上的降解、PMMA 链解散以及随后释放的单体扩散和由于低 PMMA 导致的结构轮廓熔化较高温度下的粘度。预计只有 70% 的 DEBER 剖面深度是由从样品中排出单体造成的,而其余 30% 应该是 PMMA 溶胀的结果。对通过 PMMA 在 160 °C 下以一系列平行线曝光获得的 DEBER 轮廓进行模拟。建议 PMMA 断链起源于 C–С 骨架原子上的电离事件和氢提取。160 °C 下的 PMMA 拉链长度是根据模拟和实验剖面的比较确定的,包括 3400。基于高斯剖面性质的假设再现了实验 DEBER 剖面。建议 PMMA 断链起源于 C–С 骨架原子上的电离事件和氢提取。160 °C 下的 PMMA 拉链长度是根据模拟和实验剖面的比较确定的,包括 3400。基于高斯剖面性质的假设再现了实验 DEBER 剖面。建议 PMMA 断链起源于 C–С 骨架原子上的电离事件和氢提取。160 °C 下的 PMMA 拉链长度是根据模拟和实验剖面的比较确定的,包括 3400。基于高斯剖面性质的假设再现了实验 DEBER 剖面。
更新日期:2020-04-01
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