Abstract Electron beam lithography (EBL) is one of the most popular and important technology in the nanofabrication fields for its high fabrication precision and flexibility. However, writing-time-consuming caused by the sequential patterning mechanism limits its wide application. Compared with the shapes with straight lines, the beam settling time during EBL writing for the curved shapes increases dramatically, therefore the curved structures would suffer longer writing time. Consequently, EBL is difficult to apply to the fabrication of the silicon nanopillar array with large area. In this paper, a two-layer exposure method in EBL (Raith EBPG5200) with Gaussian beam has been proposed to realize fast fabrication of large area silicon nanopillar array. The nanopillars are patterned by writing two layers of orthogonal gratings successively in one exposure job. The dose of overlap regions is twice as large as in other regions approximating rectangles to circles. The writing time is reduced to one forty-sixth of the conventional writing method, whereas the pattern fidelity is no impact. With this method, the controllable silicon nanopillars with diameters of 150 nm are fabricated. Results show that more than 85% of silicon nanopillars are within the deviation of 3.3% (145 nm to 155 nm) in diameter. This two-layer exposure method provides a practicable solution in the fabrication of large area nanopillar array.

中文翻译：

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使用电子束光刻和两层曝光法快速制造硅纳米柱阵列

摘要 电子束光刻（EBL）以其高制造精度和灵活性成为纳米制造领域最流行和最重要的技术之一。然而，顺序模式化机制导致的写入耗时限制了其广泛应用。与直线形状相比，弯曲形状的 EBL 写入过程中的光束稳定时间显着增加，因此弯曲结构将遭受更长的写入时间。因此，EBL难以应用于大面积硅纳米柱阵列的制备。在本文中，提出了一种高斯光束EBL（Raith EBPG5200）中的两层曝光方法，以实现大面积硅纳米柱阵列的快速制造。通过在一次曝光工作中连续写入两层正交光栅来图案化纳米柱。重叠区域的剂量是其他近似矩形到圆形的区域的两倍。写入时间减少到传统写入方法的四十六分之一，而图案保真度没有影响。用这种方法制造了直径为 150 nm 的可控硅纳米柱。结果表明，超过 85% 的硅纳米柱直径在 3.3%（145 nm 至 155 nm）的偏差范围内。这种两层曝光方法为大面积纳米柱阵列的制造提供了可行的解决方案。写入时间减少到传统写入方法的四十六分之一，而图案保真度没有影响。用这种方法制造了直径为 150 nm 的可控硅纳米柱。结果表明，超过 85% 的硅纳米柱直径在 3.3%（145 nm 至 155 nm）的偏差范围内。这种两层曝光方法为大面积纳米柱阵列的制造提供了可行的解决方案。写入时间减少到传统写入方法的四十六分之一，而图案保真度没有影响。用这种方法制造了直径为 150 nm 的可控硅纳米柱。结果表明，超过 85% 的硅纳米柱直径在 3.3%（145 nm 至 155 nm）的偏差范围内。这种两层曝光方法为大面积纳米柱阵列的制造提供了可行的解决方案。