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High‐Performance and Stable Dopant‐Free Silicon Solar Cells with Magnesium Acetylacetonate Electron‐Selective Contacts
Physica Status Solidi-Rapid Research Letters ( IF 2.8 ) Pub Date : 2020-04-27 , DOI: 10.1002/pssr.202000103
Zhirong Yao 1, 2 , Lun Cai 1 , Lanxiang Meng 1 , Kaifu Qiu 1, 2 , Wenjie Lin 1 , Jingsheng Jin 3 , Weiyuan Duan 2 , Kaining Ding 2 , Shenghao Li 1, 2 , Bin Ai 1 , Zongcun Liang 1 , Hui Shen 1, 4
Affiliation  

One of the challenges in fabricating high‐performance n‐type crystalline silicon (n‐type c‐Si) solar cells is the high‐quality n‐type c‐Si/metal contact. Schottky barriers are commonly found on the n‐type c‐Si/metal contact, which suppresses electron transportation. Herein, novel stacks of magnesium acetylacetonate (Mg(Acac)2)/magnesium (Mg)/silver (Ag) to form electron‐selective contacts for n‐type c‐Si solar cells are presented, which enables a dopant‐free process. An ohmic contact on n‐type c‐Si is formed using the Mg(Acac)2/Mg/Ag stacks. The transmission spectrum and ultraviolet photoelectron spectroscopy measurements show negligible conduction‐band offset and large valence‐band offset between Mg(Acac)2 and n‐type c‐Si, which indicates the electron‐transporting and hole‐blocking properties of Mg(Acac)2/n‐type c‐Si heterocontacts. Moreover, the contact resistivities (ρc) between the Mg(Acac)2/Mg/Ag electron‐selective heterocontacts and n‐type c‐Si substrates are lower than 10 mΩ cm2, which demonstrates the good electrode properties of the Mg(Acac)2/Mg/Ag stacks. The Mg(Acac)2/Mg/Ag electron‐selective stacks are applied on n‐type c‐Si solar cells with partial rear contact, and >20% efficiency is achieved, which is higher than that in a reference cell with only Ag contact. The stability of the n‐type c‐Si solar cell performance equipped with Mg(Acac)2/Mg/Ag contacts is verified under ambient conditions. This novel low‐temperature contact technique offers a reliable alternative for high‐performance n‐type c‐Si solar cells.

中文翻译:

具有乙酰丙酮镁电子选择触点的高性能且稳定的无掺杂硅太阳能电池

制造高性能n型晶体硅(n型c-Si)太阳能电池的挑战之一是高质量n型c-Si /金属接触。肖特基势垒通常出现在n型c-Si /金属触点上,从而抑制了电子传输。本文介绍了新型的乙酰丙酮镁(Mg(Acac)2)/镁(Mg)/银(Ag)堆栈,以形成用于n型c-Si太阳能电池的电子选择性触点,从而实现了无掺杂工艺。使用Mg(Acac)2 / Mg / Ag叠层在n型c-Si上形成欧姆接触。透射光谱和紫外光电子能谱测量表明,Mg(Acac)2之间的导带偏移和大价带偏移可忽略不计n型c-Si,表示Mg(Acac)2 / n型c-Si异质接触的电子传输和空穴阻挡性质。此外,接触电阻率(ρ Ç)中的Mg(ACAC)之间2 /毫克/ Ag电子选择性heterocontacts和n型μc-Si衬底比10毫欧厘米下2,这表明所述Mg的良好的电极特性( Acac)2 / Mg / Ag叠层。Mg(Acac)2 / Mg / Ag电子选择性电池堆应用于具有部分后部接触的n型c-Si太阳能电池,效率达到20%以上,比仅含Ag的参考电池要高联系。装有Mg(Acac)2的n型c-Si太阳能电池性能的稳定性/ Mg / Ag触点在环境条件下进行了验证。这项新颖的低温接触技术为高性能n型c-Si太阳能电池提供了可靠的替代方案。
更新日期:2020-04-27
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