Strong inverse spin Hall effect (ISHE) signal can be realized in GaAs via the electrical injection of hot electrons. In a recent article, it was demonstrated that optically induced hot electrons can also lead to the establishment of ISHE in GaAs but at much lower electric field. Herein, the combined role of high electric field and high energy optical injection of hot electrons in GaAs is examined. An anomalous behavior of ISHE voltage (V_ISHE) is observed. Spin‐polarized hot‐electrons are optically injected in the conduction band of n‐GaAs which are then transferred from Γ to L valley with or without applied bias. At 2.33 eV excitation energy (E_ex), a monotonous increase in V_ISHE is seen with electric field which starts to fall beyond a critical electric field. A theoretical framework based on the rate equations governing intervalley scattering is proposed, which successfully explains the observed behavior. Utilizing optically injected hot electrons at E_ex = 2.33 eV, a spin Hall device is demonstrated, that consumes less power and yields better signal‐to‐noise ratio. These findings are highly encouraging for the development of next‐generation spin‐optoelectronic devices.

中文翻译：

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热电子在低功耗基于GaAs的自旋霍尔器件开发中的作用

可以通过热电子的电注入在GaAs中实现强逆自旋霍尔效应（ISHE）信号。在最近的一篇文章中，证明了光诱导的热电子也可以导致在GaAs中建立ISHE，但是电场要低得多。在此，研究了在GaAs中高电场和热电子的高能光学注入的结合作用。观察到ISHE电压（V _ISHE）的异常行为。自旋极化的热电子被光学注入n- GaAs的导带，然后在有或没有施加偏压的情况下从Γ转移到L谷。在2.33 eV激发能（E _ex）下，V _ISHE单调增加可以看到电场开始下降超过临界电场。提出了一种基于控制区间间隔散射的速率方程的理论框架，成功地解释了观测到的行为。利用E _ex  = 2.33  eV的光注入热电子，证明了自旋霍尔器件，该器件消耗更少的功率并产生更好的信噪比。这些发现对于下一代自旋光电子器件的发展是令人鼓舞的。