β-Ga₂O₃ MOSFETs are demonstrated on heterogeneous Ga₂O₃-Al₂O₃-Si (GaOISi) substrate fabricated by ion-cutting process. Enhancement (E)- and depletion (D)-mode β-Ga₂O₃ transistors are realized on by varying the channel thickness (T_ch). E-mode GaOISi transistor with a T_ch of 15 nm achieves a high threshold voltage V_TH of ∼8 V. With the same T increase, GaOISi transistors demonstrate more stable ON-current I_ON and OFF-current I_OFF performance compared to the reported devices on bulk Ga₂O₃ wafer. Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C, respectively.

中文翻译：

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通过离子切割工艺在Si衬底上制作β-Ga2 O 3 MOSFET

的β-Ga _2个ö ₃ MOSFET被异构嘎上表现出₂ ö ₃ -Al ₂ ö ₃ -Si（GaOISi）衬底制造的离子切割过程。增强（E） -和耗尽（d）模式的β-Ga ₂ ö _3个晶体管通过改变通道的厚度（上实现Ť _CH）。T _ch为15 nm的E型GaOISi晶体管可实现约8 V的高阈值电压V _TH。随着T的增加，GaOISi晶体管表现出更稳定的导通电流I _ON和截止电流I _OFF性能与报道的Ga ₂ O ₃晶片上的器件相比。GaOISi上的晶体管在25°C和200°C时分别达到522和391 V的击穿电压。