Abstract In this report, the gate leakage mechanism for AlGaN/GaN high electron mobility transistors (HEMTs) is consistently analyzed by means of temperature-dependent reverse gate current–voltage characteristics in the temperature range of 60–320 K. The gate leakage current of the AlGaN/GaN HEMT is studied by adjusting the experimental data using Poole–Frenkel (PF), and Fowler–Nordheim (FN) tunneling. In the temperature range of 200–325 K, the reverse bias leakage current is well dominated by a Frenkel-Poole emission model. The scenario describing the PF mechanism assumes that a defect level at φt = 0.45eV could be considered as an intermediate level through which carriers can transit to reach another level attributed to dislocations closer to conduction band. On the other hand, the FN mechanism seems to operate over the entire temperature range of 60–320 K and starts to dominate the gate leakage current due to triangular barrier formation.

中文翻译：

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(Pd/Au)/Al0.22Ga0.78N/GaN 异质结构漏电流中 Poole-frenkel 和 Fowler-Nordheim 隧道传输机制的证据

摘要 在本报告中，AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的栅极泄漏机制通过在 60-320 K 温度范围内随温度变化的反向栅极电流-电压特性进行了一致的分析。通过使用 Poole-Frenkel (PF) 和 Fowler-Nordheim (FN) 隧穿调整实验数据来研究 AlGaN/GaN HEMT。在 200-325 K 的温度范围内，反向偏置漏电流由 Frenkel-Poole 发射模型很好地控制。描述 PF 机制的场景假设 φt = 0.45eV 处的缺陷水平可以被视为中间水平，载流子可以通过该水平过渡到另一个水平，这归因于更接近导带的位错。另一方面，