当前位置: X-MOL 学术Prog. Cryst. Growth Ch. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology
Progress in Crystal Growth and Characterization of Materials ( IF 5.1 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.pcrysgrow.2020.100485
Alexander E. Yachmenev , Sergey S. Pushkarev , Rodion R. Reznik , Rustam A. Khabibullin , Dmitry S. Ponomarev

Abstract The fabrication and investigation of single and multilayered structures have become an essential issue in the past decades since these structures directly define valuable properties and efficiency of widely used terahertz (THz) emitters and detectors. Since the development of molecular-beam epitaxy, as well as other crystal growth techniques, a variety of structural designs has appeared and has been proposed. Since that, an enormous progress has been achieved beginning from the pioneering work on photoconductivity in silicon toward different multilayered heterostructures. The last are now commonly utilized as base components in photoconductive THz emitters/detectors, quantum-cascade lasers for pulsed and continuous-wave THz spectroscopic and imaging systems providing critical fundamental and practical applications at the forefront of scientific knowledge (sensors, flexible electronics, security systems, biomedicine, and others). This review summarizes the developments in different approaches and crystal growth techniques, emphasizing the importance of using single and multilayered arsenides-and related III-V materials-based (phosphides, antimonides, bismuthides) structures to accomplish the needs of modern and existing instruments of THz science and technology.

中文翻译:

用于太赫兹应用的基于砷化物和相关 III-V 族材料的多层结构:各种设计和生长技术

摘要 在过去的几十年中,单层和多层结构的制造和研究已成为一个重要问题,因为这些结构直接定义了广泛使用的太赫兹 (THz) 发射器和探测器的有价值的特性和效率。随着分子束外延以及其他晶体生长技术的发展,出现并提出了各种结构设计。从那以后,从硅中光电导性的开创性工作到不同的多层异质结构,已经取得了巨大的进步。最后一种现在通常用作光电导太赫兹发射器/探测器中的基础组件,用于脉冲和连续波太赫兹光谱和成像系统的量子级联激光器,在科学知识(传感器、柔性电子、安全系统、生物医学等)的前沿提供关键的基础和实际应用。本综述总结了不同方法和晶体生长技术的发展,强调了使用单层和多层砷化物和相关 III-V 族材料(磷化物、锑化物、铋化物)结构来满足现代和现有太赫兹仪器需求的重要性。科学和技术。
更新日期:2020-05-01
down
wechat
bug