Abstract Surface potential based models are one among the best known compact models for thin film transistors. However, their use in computer aided design (CAD) tools is restricted due to the fact that they need computationally intensive and iterative approach to obtain the device characteristics. Existing techniques for computing surface potential use region wise approximations, smoothing functions and empirical methods to solve for surface potential. These techniques, often result in in-consistent results, large errors especially in transition regions. Moreover, solutions obtained using such approximations quiet often fail to establish a relation with intrinsic device parameters. This work, proposes a computationally efficient, compact, accurate and a physically based closed form solution for surface potential in case of organic thin film transistors (OTFTs). The analytical expression obtained for surface potential is a non-iterative (single step) and extremely accurate with an absolute error less than 1% compared with numerical solution. Further, the surface potential expression derived is incorporated in the all-region I–V characteristics expression of an OTFT. The I–V characteristic curves obtained using the analytical solution for surface potential are able to accurately model both linear and saturation behaviour of an OTFT.

中文翻译：

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考虑双指数态密度的基于表面电位的有机薄膜晶体管电流模型

摘要 基于表面电位的模型是薄膜晶体管最著名的紧凑模型之一。然而，它们在计算机辅助设计 (CAD) 工具中的使用受到限制，因为它们需要计算密集型和迭代方法来获得设备特性。计算表面电位的现有技术使用区域近似、平滑函数和经验方法来求解表面电位。这些技术通常会导致不一致的结果，尤其是在过渡区域中的大错误。此外，使用这种近似方法获得的解决方案通常无法与固有设备参数建立关系。这项工作提出了一种计算高效、紧凑、在有机薄膜晶体管 (OTFT) 的情况下，针对表面电位的精确且基于物理的封闭形式解决方案。获得的表面电位解析表达式是非迭代的（单步）并且非常准确，与数值解相比绝对误差小于 1%。此外，导出的表面电位表达式包含在 OTFT 的所有区域 I-V 特性表达式中。使用表面电位解析解获得的 I-V 特性曲线能够准确地模拟 OTFT 的线性和饱和行为。导出的表面电位表达式包含在 OTFT 的所有区域 I-V 特性表达式中。使用表面电位解析解获得的 I-V 特性曲线能够准确地模拟 OTFT 的线性和饱和行为。导出的表面电位表达式包含在 OTFT 的所有区域 I-V 特性表达式中。使用表面电位解析解获得的 I-V 特性曲线能够准确地模拟 OTFT 的线性和饱和行为。