This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In0.53Ga0.47As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our study indicates that, the boost of inversion charges due to negative capacitance increases with increasing remnant polarization Pr. In addition, the inversioncharge boosting for the In0.53Ga0.47As device is significantly larger than that of the Si (110) device due to the step-like inversion capacitance characteristic stemming from the 2D density-of-states of the In0.53Ga0.47As device. In other words, the quantum-capacitance induced inversion-charge loss for III-V channel can be mitigated in NCFETs.

中文翻译：

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考虑量子电容的 InGaAs 负电容双栅 FinFET 的反型电荷特性和反型电荷损失研究

本文使用经数值模拟证实的理论计算研究了 In0.53Ga0.47As 负电容 FinFET (NC-FinFET) 的反转电荷特性和量子电容诱导的反转电荷损耗。我们的研究表明，负电容引起的反转电荷的提升随着剩余极化 Pr 的增加而增加。此外，In0.53Ga0.47As 器件的反转电荷提升明显大于 Si (110) 器件，这是由于 In0.53Ga0 的二维态密度产生的阶梯状反转电容特性。 47 作为设备。换句话说，在 NCFET 中可以减轻 III-V 族沟道的量子电容引起的反转电荷损失。