This paper reports generalized design solutions for the punch-through and nonpunch-through drift layers in 4H-SiC. In general, the critical electric field relation of Konstantinov is widely used to design the drift parameters in 4H-SiC due to its accuracy. In this paper, a fitted version of Konstantinov’s critical electric field relation is used to derive the generalized optimum parameters for the drift design. The derived set of equations not only offers straightforward design of optimum drift parameters avoiding complex mathematical evaluations but also provide a meaningful insight to the drift design in 4H-SiC. From derived expressions, an inter-relation between the optimum punch-through and nonpunch-through structures is attained. For the punch-through structure, it was observed that optimum doping concentration and width for Konstantinov critical electric field model are 8% and 21.4% lower than that of the nonpunch-through structure. Consequently, the specific on-resistance for the punch-through structure is 14.9% lower than that of the nonpunch-through structure.

中文翻译：

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一种优化 4H-SiC 中单极功率器件漂移层的有效设计方法

本文报告了 4H-SiC 中穿通和非穿通漂移层的通用设计解决方案。一般来说，康斯坦丁诺夫临界电场关系因其精度而被广泛用于设计 4H-SiC 的漂移参数。在本文中，康斯坦丁诺夫临界电场关系的拟合版本用于推导出漂移设计的广义最佳参数。导出的方程组不仅提供了最佳漂移参数的直接设计，避免了复杂的数学评估，而且还为 4H-SiC 中的漂移设计提供了有意义的见解。从导出的表达式中，获得了最佳穿通结构和非穿通结构之间的相互关系。对于穿通结构，据观察，康斯坦丁诺夫临界电场模型的最佳掺杂浓度和宽度比非穿通结构低 8% 和 21.4%。因此，穿通结构的特定导通电阻比非穿通结构的导通电阻低 14.9%。