Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN layer as an oxygen diffusion barrier layer to prevent further oxidizing of the underlying AlGaN barrier layer, and to ensure that the low-resistive p-GaN layer in the access region was fully oxidized. Relative to conventional p-GaN gated AlGaN/GaN HEMTs, these AlGaN/GaN HEMTs with HR-GaN layers achieved a lower drain leakage current of 4.4 $\times 10^{-7}$ mA/mm, a higher drain current on/off ratio of 3.9 $\times 10^{9}$ , a lower on-state resistance of 17.1 ${\Omega }\cdot $ mm, and less current collapse.

中文翻译：

---

在访问区使用等离子体氧化技术的常关 p-GaN 门控 AlGaN/GaN HEMT

开发了常关型 p-GaN 门控 AlGaN/GaN 高电子迁移率晶体管 (HEMT)。氧等离子体处理将接入区中的低阻 p-GaN 层转化为高阻 GaN (HR-GaN)；该氧等离子体处理使用AlN层作为氧扩散阻挡层，以防止下面的AlGaN阻挡层进一步氧化，并确保接入区中的低电阻p-GaN层被充分氧化。相对于传统的 p-GaN 栅极 AlGaN/GaN HEMT，这些具有 HR-GaN 层的 AlGaN/GaN HEMT 实现了 4.4 的较低漏漏电流 $\times 10^{-7}$ mA/mm，更高的漏极电流开/关比为 3.9 $\times 10^{9}$ , 较低的通态电阻为 17.1 ${\Omega }\cdot $ mm，电流崩塌较少。