当前位置: X-MOL 学术IEEE J. Electron Devices Soc. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
A Compact Model of MoS2 Field-Effect Transistors from Drift-Diffusion to Ballistic Carrier Transport Regimes
IEEE Journal of the Electron Devices Society ( IF 2.3 ) Pub Date : 2020-01-01 , DOI: 10.1109/jeds.2020.2979240
Jiawei Zeng , Wanling Deng , Changjian Zhou , Jie Peng , Junkai Huang

In this letter, a compact model for charge and drain current in molybdenum disulfide (MoS2) field-effect transistors (FETs) is developed, which is valid from ballistic to quasi-ballistic to drift-diffusion electronic transport regimes. Considering the influence of trap charges in MoS2 transistors, a physical-based and analytical charge model is derived. Based on the virtual source model which applies to both ballistic and quasi-ballistic transports, the carrier number density and current expressions are combined to yield the current-voltage (I-V) characteristics. Furthermore, the presented model is validated by experimental data as well as recently reported simulations for MoS2 FETs with different gate lengths. It shows that our model is accurate, straight-forward, scalable and compatible for short- and long-channel devices.

中文翻译:

从漂移扩散到弹道载流子传输机制的 MoS2 场效应晶体管的紧凑模型

在这封信中,开发了二硫化钼 (MoS2) 场效应晶体管 (FET) 中电荷和漏极电流的紧凑模型,该模型适用于从弹道到准弹道再到漂移扩散电子传输机制。考虑到 MoS2 晶体管中陷阱电荷的影响,推导出基于物理和分析的电荷模型。基于适用于弹道和准弹道传输的虚拟源模型,将载流子数密度和电流表达式相结合以产生电流-电压 (IV) 特性。此外,所提出的模型通过实验数据以及最近报道的具有不同栅极长度的 MoS2 FET 的模拟得到了验证。它表明我们的模型准确、直接、可扩展并且兼容短通道和长通道设备。
更新日期:2020-01-01
down
wechat
bug