This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on capacitance-voltage characteristics of the device. It is shown in simulation that ${C} _{\mathrm{ GD}}$ and ${C} _{\mathrm{ DS}}$ have a demonstrable dependence on substrate selection and is consistent with expectations regarding the substrate materials conductivity. The device model was then used in transient simulation where the choice of substrate was shown to noticeably affect the model’s turn-on and turn-off energy.

中文翻译：

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衬底选择对横向 GaN FET 瞬态性能的影响

本简报介绍了衬底选择对横向 GaN 晶体管性能影响的研究。这是使用先前校准的器件 TCAD 模型来完成的，该模型用于研究基板选择对器件电容-电压特性的影响。仿真表明， ${C} _{\mathrm{ GD}}$ 和 ${C} _{\mathrm{ DS}}$ 对基板选择有明显的依赖性，并且与对基板材料电导率的预期一致。然后将该器件模型用于瞬态仿真，其中衬底的选择显着影响模型的开启和关闭能量。