A rubrene-based nanostructure has been prepared by applying the evaporation method at room temperature. The 60 Co $$ \gamma $$ γ -ray irradiation effects on the electrical properties of the rubrene nanostructure were also examined by measuring current–voltage values. Standard, Norde, and Cheung methods have been used to obtain series resistance, interface states, barrier height, and an ideality factor before and after gamma rays. After obtaining the required information from these methods, they have been compared with each other before and after irradiation. The behavior of barrier height is dependent on the evaluated methods. Cheung, Standard, and Norde functions are different from each other owing to extraction from different regions of the plots. It has also been revealed that the ideality factor values for all the methods decrease with irradiation as do the electrical properties, such as series resistance evaluated using Norde and Cheung methods. These two methods give the same results. All the methods revealed that the series resistance values increase with irradiation. Further, these parameters are dependent on the strong functions of voltage.

中文翻译：

---

电离辐射对红荧烯基金属聚合物半导体的影响：本征电性能的直接信息

通过在室温下应用蒸发方法制备了基于红荧烯的纳米结构。还通过测量电流 - 电压值来检查 60 Co $$ \gamma $$ γ 射线照射对红荧烯纳米结构电性能的影响。标准、Norde 和 Cheung 方法已用于获得伽马射线前后的串联电阻、界面态、势垒高度和理想因子。从这些方法中获得所需的信息后，将它们在辐照前后进行了相互比较。势垒高度的行为取决于评估的方法。Cheung、Standard 和 Norde 函数因从地块的不同区域提取而彼此不同。还表明，所有方法的理想因子值都随着辐照而降低，电气特性（例如使用 Norde 和 Cheung 方法评估的串联电阻）也是如此。这两种方法给出了相同的结果。所有方法都表明串联电阻值随着辐照而增加。此外，这些参数取决于电压的强函数。