Abstract In this paper, Tunnel Oxide Passivated Contact (TOPCon) silicon solar cells with the industrial area (244.32 cm2) are fabricated on N-type silicon substrates. Both the ultra-thin tunnel oxide layer and phosphorus doped polycrystalline silicon (polysilicon) thin film are prepared by the LPCVD system. The wrap-around of polysilicon is observed on the surface of borosilicate glass (BSG). The polysilicon wrap-around can form a leakage current path, thus degrades the shunt resistance of solar cells, and leads to the degradation of solar cell efficiency. Different methods are adopted to treat the polysilicon wrap-around and improve shunt resistance of solar cells. The experimental results indicate that a chemical etching method can effectively solve the problem of polysilicon wrap-around and improve the performance of solar cells. Finally, a conversion efficiency of 22.81% has been achieved by our bifacial TOPCon solar cells, with Voc of 702.6 mV, Jsc of 39.78 mA/cm2 and FF of 81.62%.

中文翻译：

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LPCVD环绕对n型隧道氧化物钝化接触c-Si太阳能电池性能的影响

摘要 本文在N型硅基板上制备了工业面积(244.32 cm2)的隧道氧化物钝化接触(TOPCon)硅太阳能电池。超薄隧道氧化层和掺磷多晶硅（polysilicon）薄膜均采用LPCVD系统制备。在硼硅玻璃 (BSG) 表面观察到多晶硅的环绕。多晶硅缠绕会形成漏电流路径，从而降低太阳能电池的分流电阻，导致太阳能电池效率下降。采用不同的方法处理多晶硅缠绕，提高太阳能电池的分流电阻。实验结果表明，化学刻蚀方法可以有效解决多晶硅缠绕问题，提高太阳能电池性能。最后，