A low-temperature multi-frequency electron spin resonance (ESR) study has been carried out on 1, 3.5, and 6 layer thick MoS 2 films, grown by metal organic vapor deposition (MOCVD) and subsequently transferred on SiO 2 /Si. This reveals the observation of a previously unreported, nearly isotropic signal at g ≈ 1.9998 with corresponding spin center (spin S = ½) densities ranging from ∼6 × 10 8 cm −2 to ∼5 × 10 11 cm −2 . The ESR investigation is closely combined with an in-depth analysis by an assortment of other experimental techniques, including atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM), to ultimately result in the assignment of the ESR signal to a defect of intrinsic nature, most likely a Mo vacancy (V Mo ) related defect located at MoS 2 grain edges or boundaries. The ox...

中文翻译：

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MOCVD生长的转移MoS 2层的分析：与Mo空位相关的缺陷形成的证据

已经在1、3.5和6层厚的MoS 2膜上进行了低温多频电子自旋共振（ESR）研究，该膜通过金属有机气相沉积（MOCVD）生长并随后转移到SiO 2 / Si上。这揭示了观察到先前未报告的，在g≈1.9998时几乎各向同性的信号，相应的自旋中心（自旋S =½）密度范围为〜6×10 8 cm -2到〜5×10 11 cm -2。ESR调查与其他各种实验技术的深入分析紧密结合，包括原子力显微镜（AFM），卢瑟福背散射光谱（RBS），X射线光电子能谱（XPS）和透射电子显微镜（TEM） ），最终导致将ESR信号分配给固有缺陷，最可能与Mo空位（V Mo）相关的缺陷位于MoS 2晶粒边缘或边界。牛...