Among a rich variety of emerging spintronic devices, spin‐torque diodes (STDs) are among the most interesting, from both a fundamental and an applied perspective. The spin‐torque diode effect occurs when a microwave alternating electric current injected into a magnetic tunneling junction (MTJ) is rectified due to the simultaneous actions of tunneling magnetoresistance and spin‐transfer torque. While the sensitivity of STDs observed in the initial research is rather modest (about 1.4 mV mW⁻¹), after only a few years researchers have increased it to 200 kV W⁻¹ and demonstrated rectification at nanowatt input powers, which radically exceeds the capabilities of mainstream Schottky diodes. This impressive progress is based on a deep understanding of the complex STD physics and on recent advances in MTJ fabrication technology. Herein, the experimental pathways toward increasing the sensitivity and extending the frequency range of STDs and theoretical works aimed at explaining the complex nonlinear dynamics are analysed, and a wide variety of possible STD applications are discussed.

中文翻译：

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自旋扭矩二极管：从基础研究到应用

从基础和应用的角度来看，在各种各样的新兴自旋电子器件中，自旋转矩二极管（STD）最为有趣。当由于隧穿磁阻和自旋传递转矩的同时作用而对注入到磁隧道结（MTJ）中的微波交流电进行整流时，就会发生自旋转矩二极管效应。尽管在最初的研究中观察到的性传播疾病的敏感性相当低（约1.4 mV mW ^-1），但仅在几年后研究人员将其提高到200 kV W ^-1并展示了在纳瓦输入功率下的整流能力，这在根本上超过了主流肖特基二极管的能力。这一令人瞩目的进步是基于对复杂的STD物理原理的深刻理解以及MTJ制造技术的最新进展。在本文中，分析了提高STD灵敏度和扩展其频率范围的实验途径以及旨在解释复杂非线性动力学的理论工作，并讨论了各种可能的STD应用。