Abstract Cadmium telluride (CdTe) is immensely interesting narrow band gap semiconductor with high electrical conductivity having promising applications in new-generation electronics and photo-electronic devices. In the present study, CdTe thin film was fabricated by thermal evaporation technique onto pre-cleaned glass substrate. The EDAX result indicates that the prepared thin film has non-stoichiometric nature. The SEM image revealed that the film is continuous and free form defects. The optical band gap is about 1.53 eV evaluated using absorption spectra. Using photo-response characterization, the responsivity (R*), specific detectivity (D), internal quantum efficiency (IQE) and external quantum efficiency (EQE) are determined as a function of illumination intensity. The effect of cycle numbers and applied voltage on the growth and decay parameters such as dispersion parameters (α), characteristic temperature (To) and localized state distribution parameter (Eo) are determined. The trap depth parameters of CdTe thin film is explicated on the basis of defect controlled photoconductivity mechanism. These results confirm that the CdTe thin film is a capable contender for photo-detection applications.

中文翻译：

---

接近新的光电：CdTe 纳米微晶薄膜

摘要 碲化镉 (CdTe) 是一种非常有趣的窄带隙半导体，具有高导电性，在新一代电子和光电器件中具有广阔的应用前景。在本研究中，CdTe 薄膜是通过热蒸发技术制造到预先清洁的玻璃基板上的。EDAX 结果表明制备的薄膜具有非化学计量性质。SEM 图像显示薄膜是连续的和自由形式的缺陷。使用吸收光谱评估的光学带隙约为 1.53 eV。使用光响应表征，响应度 (R*)、比检测率 (D)、内部量子效率 (IQE) 和外部量子效率 (EQE) 被确定为光照强度的函数。确定了循环次数和施加电压对生长和衰减参数的影响，例如色散参数 (α)、特征温度 (To) 和局部状态分布参数 (Eo)。基于缺陷控制的光电导机理解释了CdTe薄膜的陷阱深度参数。这些结果证实 CdTe 薄膜是光电检测应用的有力竞争者。