Electronic and transport properties of realistic silicene nanoribbons (SiNRs) with edge defects are investigated in detail by using statistical atomistic quantum transport simulations based on the non-equilibrium Green's function (NEGF) formalism. We investigate the influence of SiNR width, length, and edge defect density on several parameters relevant for nanoscale device applications, including transport gap, conductance and intrinsic switching capability, mean free path and localization length. Most importantly, we find that ≈2 nm-wide defective SiNRs with lengths in the 13 nm to 28 nm range are a promising channel material for field-effect transistors at this scale, additionally avoiding the localization transport regime and achieving a variability of 12% to 20% even in the worst case.

中文翻译：

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有缺陷的硅烯纳米带的长度相关电子传输特性

通过使用基于非平衡格林函数 (NEGF) 形式主义的统计原子量子传输模拟，详细研究了具有边缘缺陷的现实硅烯纳米带 (SiNR) 的电子和传输特性。我们研究了 SiNR 宽度、长度和边缘缺陷密度对与纳米级器件应用相关的几个参数的影响，包括传输间隙、电导和本征切换能力、平均自由程和定位长度。最重要的是，我们发现 ≈2 nm 宽的缺陷 SiNRs 长度在 13 nm 到 28 nm 范围内是这种规模的场效应晶体管的有前途的沟道材料，另外避免了局部化传输机制并实现了 12% 的可变性即使在最坏的情况下也能达到 20%。