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A Broadband InP Track-and-Hold Amplifier Using Emitter Capacitive/Resistive Degeneration
IEEE Microwave and Wireless Components Letters ( IF 3 ) Pub Date : 2020-04-01 , DOI: 10.1109/lmwc.2020.2972752
Shaojun Li , Yongbo Su , Hongliang Lv , Lei Zhou , Yimen Zhang , Yuming Zhang , Jun Hu , Feng Yang , Zhi Jin

In this letter, we present a 24-GSa/s, >20-GHz wideband track-and-hold amplifier (THA) based on indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology for high-speed sampling systems. In the proposed approach, the output pole of the input stage is canceled by the zero produced by the emitter capacitive/resistive degeneration, and the bandwidth is thereby extended without voltage drop. The compensation technique for $V_{\mathrm{be}}$ modulation in the output stage is introduced to reduce distortion. The monolithic microwave integrated circuit (MMIC) prototype occupies only 0.69 mm2, and the experimental results show that it has a 0.112– $f_{T}$ bandwidth from dc to 22.3 GHz, which is wider than any ratio reported compact THA solutions using the InP technology. In addition, a spurious-free dynamic range (SFDR) of better than 42 dB and total harmonic distortion (THD) of less than −25 dBc are demonstrated at a 24-GSa/s sampling rate. The THA consumes only 374 mW, which is among the lowest dc power dissipation reported for the InP technology.

中文翻译:

使用发射极电容/电阻退化的宽带 InP 跟踪保持放大器

在这封信中,我们展示了一种用于高速采样系统的基于磷化铟 (InP) 双异质结双极晶体管 (DHBT) 技术的 24-GSa/s、>20-GHz 宽带采样保持放大器 (THA)。在所提出的方法中,输入级的输出极点被发射极电容/电阻退化产生的零抵消,从而在没有压降的情况下扩展了带宽。补偿技术 $V_{\mathrm{be}}$ 在输出级中引入调制以减少失真。单片微波集成电路(MMIC)原型仅占用0.69 mm 2,实验结果表明它具有0.112– $f_{T}$ 从直流到 22.3 GHz 的带宽,这比使用 InP 技术报告的任何比例的紧凑型 THA 解决方案都要宽。此外,在 24-GSa/s 采样率下证明了优于 42 dB 的无杂散动态范围 (SFDR) 和小于 -25 dBc 的总谐波失真 (THD)。THA 仅消耗 374 mW,这是 InP 技术报告的最低直流功耗之一。
更新日期:2020-04-01
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