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Synergistically Enhancing Thermoelectric Performance of n‐Type PbTe with Indium Doping and Sulfur Alloying
Annalen Der Physik ( IF 2.4 ) Pub Date : 2019-12-17 , DOI: 10.1002/andp.201900421
Dongyang Wang 1 , Yongxin Qin 1 , Sining Wang 1 , Yuting Qiu 2 , Dudi Ren 3 , Yu Xiao 1 , Li‐Dong Zhao 1
Affiliation  

To achieve high‐performance n‐type PbTe‐based thermoelectric materials, this work provides a synergetic strategy to improve electrical transport property with indium (In) element doping and reduces thermal conductivity with sulfur (S) element alloying. In n‐type PbTe, In doping can tune the carrier density in the whole working temperature range, causing the carrier density to increase from 2.18 × 1019 cm−3 at 300 K to 4.84 × 1019 cm−3 at 823 K in Pb0.98In0.005Sb0.015Te. The optimized carrier density can further modulate electrical conductivity and Seebeck coefficient, finally contributing to a substantial increase of power factor, and a maximum power factor increase from 19.7 µW cm−1 K−2 in Pb0.985Sb0.015Te to 28.2 µW cm−1 K−2 in Pb0.9775In0.0075Sb0.015Te. Based on the optimally In‐doped PbTe, S alloying is introduced to suppress phonon propagation by forming a complete solid solution, which could effectively reduce lattice thermal conductivity and simultaneously benefit carrier mobility to maintain high power factor. With S alloying, the minimum lattice thermal conductivity decreases from 0.76 Wm−1 K−1 in Pb0.985Sb0.015Te to 0.42 Wm−1 K−1 in Pb0.98In0.005Sb0.015Te0.88S0.12. Combining the advantages of both In doping and S alloying, the peak ZT value and averaged ZT (ZTave) (300–873 K) are boosted from 1.0 and 0.60 in Pb0.985Sb0.015Te to 1.4 and 0.87 in Pb0.98In0.005Sb0.015Te0.94S0.06.

中文翻译:

铟掺杂和硫合金化协同增强n型PbTe的热电性能

为了获得高性能的基于n型PbTe的热电材料,这项工作提供了一种协同策略,以掺杂铟(In)元素来改善电传输性能,并通过硫(S)元素合金化来降低导热性。在n型PbTe中,In掺杂可在整个工作温度范围内调整载流子密度,从而使载流子密度从300 K时的2.18×10 19 cm -3增加到823 K in Pb中的4.84×10 19 cm -3 0.980.005的Sb 0.015特。优化的载流子密度可以进一步调节电导率和塞贝克系数,最终有助于功率因数的显着增加,最大功率因数从Pb 0.985 Sb 0.015 Te中的19.7 µW cm -1  K -2增加到28.2 µW cm -1  K -2 in铅0.9775 In 0.0075 Sb 0.015特。基于最佳的In掺杂PbTe,S合金化被引入以通过形成完整的固溶体来抑制声子传播,这可以有效地降低晶格热导率,同时有利于载流子迁移率以保持高功率因数。通过S合金化,最小晶格热导率从Pb 0.985 Sb 0.015 Te中的0.76 Wm -1  K -1降至Pb 0.98 In 0.005 Sb 0.015 Te 0.88 S 0.12中的0.42 Wm -1 K -1。结合In掺杂和S合金的优点,ZT峰值和平均值ZTZT ave)(300–873 K)从Pb 0.985 Sb 0.015 Te中的1.0和0.60提高到Pb 0.98 In 0.005 Sb 0.015 Te 0.94 S 0.06中的1.4和0.87 。
更新日期:2019-12-17
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