Perovskite nanocrystal (PNC) suffers from solution corrosion and water/oxygen oxidation when used in light‐emitting diodes (LEDs). Atomic layer deposition (ALD) is applied to introduce Al₂O₃ infilling and interface engineering for the CsPbBr₃ nanocrystal emission layers, and the inorganic electron transport layer‐based CsPbBr₃–ZnMgO LED device is fabricated. The introduction of Al₂O₃ ALD layers significantly improves the tolerance of CsPbBr₃ PNC thin films to polar solvents ethanol of ZnMgO during spin coating. The operation lifetime of ALD‐treated CsPbBr₃ PNC–ZnMgO LED is prolonged to about two orders of magnitude greater than that of the CsPbBr₃ PNC‐TPBi LED device with a largely improved external quantum efficiency (EQE) value. Moreover, the infilling of Al₂O₃ into the CsPbBr₃ layer boosts the carrier mobility for more than 40 times inside the light‐emission layer. However, the interfacial carrier transport between different functional layers is hindered by the insulated Al₂O₃ layer, which provides an effective barrier for excess electron transport. Such a favorable band alignment facilitates the carrier balance of the device and contributes to the improved electroluminescent performance of the device with ALD Al₂O₃ interface engineering, which is further supported by theoretical device modeling. Herein, a facile method is provided to fabricate PNC‐LED devices with both high efficiency and long‐term lifetime.

中文翻译：

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原子层沉积法制备CsPbBr3纳米晶发光二极管的界面工程

钙钛矿纳米晶体（PNC）用于发光二极管（LED）时会遭受溶液腐蚀和水/氧氧化。应用原子层沉积（ALD）引入CsPbBr ₃纳米晶体发射层的Al ₂ O ₃填充和界面工程，并制造了基于无机电子传输层的CsPbBr ₃ -ZnMgO LED器件。Al ₂ O ₃ ALD层的引入显着提高了CsPbBr ₃ PNC薄膜在旋涂过程中对ZnMgO极性溶剂乙醇的耐受性。ALD处理的CsPbBr _3的使用寿命与CsPbBr ₃ PNC-TPBi LED器件相比，PNC–ZnMgO LED的使用寿命延长了约两个数量级，并且外部量子效率（EQE）值大大提高。此外，在CsPbBr ₃层中填充Al ₂ O _3可以使载流子迁移率在发光层内部提高40倍以上。然而，绝缘Al ₂ O ₃层阻碍了不同功能层之间的界面载流子传输，这为过量电子传输提供了有效的屏障。这种有利的能带对准促进了器件的载流子平衡，并有助于具有ALD Al ₂的器件的改善的电致发光性能。O ₃接口工程，理论设备建模进一步支持。本文提供了一种简便的方法来制造具有高效率和长期使用寿命的PNC-LED器件。