A comprehensive evaluation of sensitivity between double gate tunnel FET and n+ pocket doped vertical tunnel FET based label-free biosensors is reported in this work. Both the biosensors possess nanogaps on the left and right of the fixed dielectric (HfO2) which enhances the capture area of the biosensors. Comparison has been made on the TCAD simulation studies of their sensitivities considering neutral/charged biomolecules having different dielectric constants. The sensitivity of VB is found to be approximately 104 times the sensitivity of DB due to its current conduction in both vertical and lateral directions. Also, the effects of steric hindrance and irregular position of probes/receptors are analyzed to understand the non-ideal behavior of the sensors. Sensitivity is calculated from the simulated results for four different cases of partially filled nanogaps – decreasing, increasing, concave and convex profiles. It rises by about 5–7% when filled factor is increased from 40 to 66%. Finally, benchmarking of proposed VB is done against other published literature as it gives better result in terms of sensitivity.

中文翻译：

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考虑非理想杂交问题的基于 N+ 口袋掺杂垂直 TFET 的介电调制生物传感器：模拟研究

在这项工作中报告了双栅极隧道 FET 和基于 n+ 口袋掺杂垂直隧道 FET 的无标记生物传感器之间的灵敏度的综合评估。两种生物传感器在固定电介质 (HfO2) 的左侧和右侧都具有纳米间隙，这增强了生物传感器的捕获面积。考虑到具有不同介电常数的中性/带电生物分子，对其敏感性的 TCAD 模拟研究进行了比较。VB 的灵敏度大约是 DB 灵敏度的 104 倍，因为它在垂直和横向两个方向都传导电流。此外，还分析了空间位阻和探针/受体不规则位置的影响，以了解传感器的非理想行为。灵敏度是根据四种不同情况的部分填充纳米间隙的模拟结果计算得出的——减少、增加、凹面和凸面轮廓。当填充因子从 40% 增加到 66% 时，它增加了大约 5-7%。最后，建议的 VB 的基准测试是针对其他已发表的文献进行的，因为它在灵敏度方面给出了更好的结果。