Resistive switching devices—memristors—present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory cells and analog computing applications. In this brief, the tuning approach based on a memristor-resistor voltage divider (VD) is validated experimentally using commercial memristors from Knowm Inc. and a custom circuit. Rapid and controllable multi-state SET tuning is shown with an appreciable range of different resistance values obtained as a function of the amplitude of the applied voltage pulse. The efficiency of the VD is finally compared against an adaptive pulse-based tuning protocol, in terms of circuit overhead, tuning precision, tuning time, and energy consumption, qualifying as a simple hardware solution for fast, reliable, and energy-efficient ML resistance tuning.

中文翻译：

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用于忆阻器自限模拟状态编程的分压器

电阻开关器件（忆阻器）具有可调的增量开关特性。精确、重复和大范围地调整它们的状态，使忆阻器非常适合多级 (ML) 电阻存储单元和模拟计算应用。在本简报中，基于忆阻器-电阻分压器 (VD) 的调谐方法使用 Knowm Inc. 的商用忆阻器和定制电路进行了实验验证。显示了快速且可控的多状态 SET 调谐，具有可观的不同电阻值范围，该电阻值是所施加电压脉冲幅度的函数。VD 的效率最终与基于自适应脉冲的调谐协议在电路开销、调谐精度、调谐时间和能耗方面进行比较，作为一种简单的硬件解决方案，可以快速、