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A 7-Bit Reverse-Saturated SiGe HBT Discrete Gain Step Attenuator
IEEE Transactions on Circuits and Systems II: Express Briefs ( IF 4.4 ) Pub Date : 2020-04-01 , DOI: 10.1109/tcsii.2019.2922418
Murat Davulcu , Abdurrahman Burak , Yasar Gurbuz

In this brief, the analysis, design, and measured results of a fully integrated 7-bit step attenuator implemented in a 0.25- $\mu \text{m}$ Silicon–Germanium (SiGe) BiCMOS process technology, are described. The attenuator is designed based on delicately ordered and cascaded $\Pi $ /T type attenuation blocks, which are comprised of series/shunt switches employing SiGe hetero-junction bipolar transistors (HBTs) with peak $f_{T}/f_{\max }$ of 110/180 GHz. HBTs are employed as a series switch to decrease the insertion-loss (IL) of the attenuator. Moreover, to the authors’ best knowledge, this is the first study presenting the effect of employing reverse-saturated HBTs as a shunt switch for each attenuation blocks. Thanks to this advancement, the highest input-referred 1-dB compression point (IP1dB) is reported for Si-based similar studies. This method also decreases the IL of the proposed attenuator. The measurements result in the state-of-the-art performance with 28.575-dB attenuation range by 0.225-dB gain steps while maintaining 7-bit amplitude resolution across 6.6 GHz–12.8 GHz frequency band, where RMS phase error remains below 3.3° and IL is less than 12.4 dB. The measured IP1dB of the attenuator is 13.5 dBm while drawing 8 mA from 3.3-V supply. The die occupies an area of 1.37 mm $\times \,\, 0.56$ mm excluding pads.

中文翻译:

7 位反向饱和 SiGe HBT 离散增益步进衰减器

在本简报中,在 0.25 英寸的器件中实现了完全集成的 7 位步进衰减器的分析、设计和测量结果。 $\mu \text{m}$ 描述了硅锗 (SiGe) BiCMOS 工艺技术。衰减器的设计基于精心排序和级联 $\Pi $ /T 型衰减块,由串联/并联开关组成,采用具有峰值的 SiGe 异质结双极晶体管 (HBT) $f_{T}/f_{\max }$ 110/180 GHz。HBT 用作串联开关以降低衰减器的插入损耗 (IL)。此外,据作者所知,这是第一项展示采用反向饱和 HBT 作为每个衰减块的分流开关的效果的研究。由于这一进步,基于硅的类似研究报告了最高输入参考 1-dB 压缩点 (IP 1dB )。这种方法还降低了所提出的衰减器的 IL。测量产生了最先进的性能,衰减范围为 28.575-dB,增益步长为 0.225-dB,同时在 6.6 GHz–12.8 GHz 频带内保持 7 位幅度分辨率,其中 RMS 相位误差保持在 3.3°以下,并且IL 小于 12.4 dB。实测IP 1dB衰减器的电流为 13.5 dBm,同时从 3.3 V 电源汲取 8 mA 电流。模具占地1.37 mm $\times \,\, 0.56$ mm 不包括垫。
更新日期:2020-04-01
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