This paper focused on nonlinear distortion modeling and characterization of AlGaN/GaN HEMT on SiC substrate using a two-tone intermodulation measurement. The variation of Taylor series coefficients with temperature: linear terms ( ${G}_{ {m}}$ and ${G}_{ {ds}}$ ), nonlinear terms ( ${G}_{ {m2}}$ , ${G}_{ {m3}}$ , ${G}_{ {ds2}}$ , and ${G}_{ {ds3}}$ ), and the cross terms ( ${G}_{ {md}}$ , ${G}_{ {md2}}$ , and ${G}_{ {m2d}}$ ) are reported. Furthermore, in the saturation region, the magnitude of ${G}_{ {ds}}$ related linear, nonlinear, and cross terms ( ${G}_{ {ds}}$ , ${G}_{ {ds2}}$ , ${ G}_{ {ds3}}$ , ${G}_{ {md}}$ , ${ G}_{ {md2}}$ , and ${G}_{ {m2d}}$ ) are found to be minimal. This implies that the nonlinear distortion behavior of the device is transconductance-dependent. A temperature-dependent current-based empirical model taking into account bias, input power, and frequency for the nonlinearity of the device has been developed based on two-tone measurements. The modeled data are consistent with the two-tone measurements, providing an effective means for analyzing these devices.

中文翻译：

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GaN HEMT 的泰勒级数系数和互调失真特性的温度依赖性

本文重点介绍了使用双色调互调测量对 SiC 衬底上的 AlGaN/GaN HEMT 进行非线性失真建模和表征。泰勒级数系数随温度的变化：线性项（ ${G}_{ {m}}$ 和 ${G}_{ {ds}}$ ), 非线性项 ( ${G}_{ {m2}}$ , ${G}_{ {m3}}$ , ${G}_{ {ds2}}$ ， 和 ${G}_{ {ds3}}$ )，以及交叉项 ( ${G}_{ {md}}$ , ${G}_{ {md2}}$ ， 和 ${G}_{ {m2d}}$ ) 报道。此外，在饱和区，幅度 ${G}_{ {ds}}$ 相关的线性、非线性和交叉项（ ${G}_{ {ds}}$ , ${G}_{ {ds2}}$ , ${ G}_{ {ds3}}$ , ${G}_{ {md}}$ , ${ G}_{ {md2}}$ ， 和 ${G}_{ {m2d}}$ ) 被发现是最小的。这意味着器件的非线性失真行为与跨导有关。已经基于双音测量开发了一种基于温度的基于电流的经验模型，该模型考虑了器件非线性的偏置、输入功率和频率。建模数据与双音测量一致，为分析这些设备提供了有效手段。