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Forming indium-carbon (In–C) bonds at the edges of graphitic nanoplatelets
Materials Today Advances ( IF 10 ) Pub Date : 2020-02-06 , DOI: 10.1016/j.mtadv.2019.100030
I.-Y. Jeon , S.-W. Kim , S.-H. Shin , S.-M. Jung , J.-B. Baek

Indium (In), one of the soft and malleable post-transition metals, was introduced along the broken edges of graphitic nanoplatelets (GnPs) by mechanochemically ball-milling graphite in the presence of solid state In beads. After completely leaching off unreacted In using royal water (aqua regia), the formation of In–C bonds in the resulting In-doped graphitic nanoplatelets (InGnPs) was confirmed using various analytical techniques, including atomic-resolution transmission electron microscopy (AR-TEM). Scanning TEM (STEM) image shows that In elements instead of In clusters were uniformly distributed in the InGnPs, suggesting the formation of In–C bonds. The content of In in the InGnPs was 0.34 at% (3.01 wt%), as determined by X-ray photoelectron spectroscopy (XPS). The mechanochemically induced chemical reaction was powerful enough to form In–C bonds. Further, the InGnPs demonstrated catalytic activity toward the oxygen reduction reaction (ORR) comparable to commercial Pt/C catalysts, as well as excellent durability and tolerance against impurities (methanol and CO) in alkaline medium.



中文翻译:

在石墨纳米片的边缘形成铟-碳(In-C)键

铟(In)是一种柔软且具有延展性的过渡金属,是通过在固溶态珠中通过机械化学球磨石墨沿石墨纳米片(GnPs)的断裂边缘引入的。在使用皇家水(王水)完全浸出未反应的In后,使用各种分析技术,包括原子分辨透射电子显微镜(AR-TEM),证实了所得的In掺杂石墨纳米片(InGnPs)中In-C键的形成。 )。扫描TEM(STEM)图像显示InIn而不是In团簇在InGnPs中均匀分布,表明In-C键的形成。通过X射线光电子能谱法(XPS)测定,InGnPs中In的含量为0.34at%(3.01wt%)。机械化学诱导的化学反应足以形成In-C键。此外,InGnPs表现出与市售Pt / C催化剂相当的对氧还原反应(ORR)的催化活性,以及​​优异的耐久性和对碱性介质中杂质(甲醇和CO)的耐受性。

更新日期:2020-02-06
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