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Silicon diphosphide (SiP2) and silicon diarsenide (SiAs2): Novel stable 2D semiconductors with high carrier mobilities, promising for water splitting photocatalysts
Materials Today Energy ( IF 9.3 ) Pub Date : 2020-01-28 , DOI: 10.1016/j.mtener.2019.100377
Fazel Shojaei , Bohayra Mortazavi , Xiaoying Zhuang , Maryam Azizi

Two dimensional (2D) semiconducting light absorbers, have recently considered as promising components to improve the efficiency in the photocatalytic hydrogen production via water splitting. In this work, by employing density functional theory computations, we introduced novel SiX2 (X = P, As) nanosheets in tetragonal (penta-) and orthorhombic (rec-) phases, as promising light absorber semiconductors for overall water splitting. The predicted nanomembranes exhibit good mechanical, dynamical and thermal stabilities. They also show small cleavage energies in the range of 0.31 J/m2 to 0.39 J/m2, comparable to that of the graphene and thus suggesting the feasibility of their experimental exfoliation. Notably, predicted monolayers are semiconductors with indirect band gaps of 2.65 eV for penta-SiP2, 2.35 eV for penta-SiAs2, 1.89 eV for rec-SiAs2, and a direct band gap of 2.21 eV for rec-SiP2. These nanomaterials however show relatively large interlayer quantum confinement effects, resulting in smaller band gap values for bilayer lattices. We observed a huge difference between the electron and hole mobilities for penta-SiP2 and rec-SiAs2 monolayers and highly directional dependent electron and hole mobilities in rec-SiP2, yielding an effective separation of photogenerated charge carriers. Remarkably, these novel nanomembranes show strong absorption in the visible region of light as well as suitable band edge positions for photocatalytic water splitting reaction, specifically under neutral conditions.



中文翻译:

二磷化硅(SiP 2)和二砷化硅(SiAs 2):具有高载流子迁移率的新型稳定2D半导体,有望用于水分解光催化剂

二维(2D)半导体光吸收剂最近被认为是有望通过分水提高光催化制氢效率的有希望的组件。在这项工作中,通过采用密度泛函理论计算,我们引入了新颖的SiX 2(X = P,As)纳米片处于四方(五相)和正交晶(rec-)相,作为有希望将其用于总水分解的光吸收剂半导体。预测的纳米膜表现出良好的机械,动力学和热稳定性。它们还显示出在0.31 J / m 2至0.39 J / m 2范围内的小分裂能与石墨烯相当,因此暗示了其实验性剥离的可行性。值得注意的是,预测的单层是具有五价SiP 2的2.65 eV,五价SiAs 2的2.35 eV,rec-SiAs 2的1.89 eV和rec-SiP 2的2.21 eV的直接带隙的间接带隙的半导体。然而,这些纳米材料显示出相对较大的层间量子限制效应,从而导致双层晶格的带隙值较小。我们观察到的电子和空穴迁移率之间的巨大差异为五的SiP 2和REC-SIAS 2个在REC-SiP的单层和高度定向依赖性电子和空穴迁移率2,可以有效分离光生载流子。值得注意的是,这些新型纳米膜在可见光区域表现出较强的吸收能力,并且在光催化水分解反应中具有合适的能带边缘位置,特别是在中性条件下。

更新日期:2020-01-28
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