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Spin filtering in a HgTe topological insulator PN junction via Rashba spin–orbit interaction
Solid State Communications ( IF 2.1 ) Pub Date : 2020-06-01 , DOI: 10.1016/j.ssc.2020.113906
Liangzhong Lin , Qingmin Pu , Zhiqiang Shi , Xiaojing Li , Dong Zhang , Jiaji Zhu , Zhenhua Wu

Abstract This work presents theoretically investigate the electron transport through a PN junction in two-dimensional HgTe/CdTe topological insulator. We find that the transmission can be tuned by changing the incidence angle, gate voltage, Fermi energy and the Rashba spin–orbit interaction (RSOI). By tuning the strength of RSOI modulation, the efficient spin-flip conversion for the spin-up and spin-down channels are found. Furthermore, a perfect one-channel transmission mode with T = 1 is formed due to the spin-split induced by the RSOI. This RSOI-induced spin-split mechanism provides us a way of pure electrical modulation to manipulate the spin and charge currents.

中文翻译:

通过 Rashba 自旋轨道相互作用在 HgTe 拓扑绝缘体 PN 结中进行自旋滤波

摘要 这项工作从理论上研究了通过二维 HgTe/CdTe 拓扑绝缘体中 PN 结的电子传输。我们发现可以通过改变入射角、栅极电压、费米能量和 Rashba 自旋轨道相互作用 (RSOI) 来调整传输。通过调整 RSOI 调制的强度,发现了自旋向上和自旋向下通道的有效自旋翻转转换。此外,由于 RSOI 引起的自旋分裂,形成了 T = 1 的完美单通道传输模式。这种由 RSOI 引起的自旋分裂机制为我们提供了一种纯电调制方式来操纵自旋和充电电流。
更新日期:2020-06-01
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