The exotic photophysical properties of organic–inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front‐runners for next‐generation non‐volatile flash photomemory. However, the long photo‐programming time of photomemory limits its application on light‐fidelity (Li‐Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene‐block‐poly(ethylene oxide) (PS‐b‐PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo‐responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti‐solvent functionalities of the perovskite/PS‐b‐PEO composite film, thus allowing the solution‐processable poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo‐induced charge transfer rate of 0.056 ns⁻¹, high charge transfer efficiency of 89%, ON/OFF current ratio of 10⁴, and extremely low programming time of 5 ms can be achieved. This solution‐processable and fast photo‐programmable non‐volatile flash photomemory can trigger the practical application on Li‐Fi.

中文翻译：

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通过空间可寻址的钙钛矿/嵌段共聚物复合膜实现超快响应的非易失性闪存照相记忆

具有高激子寿命和低结合能的有机-无机杂化钙钛矿的奇异光物理性质已成为下一代非易失性闪存光记忆的有前途的先驱。但是，由于光记忆的长时间照相编程时间限制了其在光保真度（Li-Fi）上的应用，这需要高存储容量和较短的编程时间。本文中，聚苯乙烯嵌段-聚环氧乙烷（PS- b - PEO）/钙钛矿复合膜中作为光敏浮栅的空间可寻址钙钛矿被证明可阐明形态学对光记忆光响应特性的影响。铅离子和PEO段之间的螯合促进钙钛矿/ PS-的反溶剂的功能b-PEO复合膜，因此可溶液加工的聚（3-己基噻吩-2,5-二基）（P3HT）充当活性通道。通过控制钙钛矿与P3HT之间的界面区域，可以实现0.056 ns ^-1的快速光诱导电荷传输速率，89％的高电荷传输效率，10 ^4的ON / OFF电流比以及极低的5 ms编程时间实现。这种可处理的，可快速编程的非易失性闪存照相存储器可以触发Li-Fi的实际应用。