For semitransparent devices with n‐i‐p structures, a metal oxide buffer material is commonly used to protect the organic hole transporting layer from damage due to sputtering of the transparent conducting oxide. Here, a surface treatment approach is addressed for tungsten oxide‐based transparent electrodes through slight modification of the tungsten oxide surface with niobium oxide. Incorporation of this transparent electrode technique to the protective buffer layer significantly recovers the fill factor from 70.4% to 80.3%, approaching fill factor values of conventional opaque devices, which results in power conversion efficiencies over 18% for the semitransparent perovskite solar cells. Application of this approach to a four‐terminal tandem configuration with a silicon bottom cell is demonstrated.

中文翻译：

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用于半透明钙钛矿太阳能电池和四端子串联应用的基于氧化钨的表面处理缓冲层组成的透明电极

对于具有n-i-p结构的半透明器件，通常使用金属氧化物缓冲材料来保护有机空穴传输层不受透明导电氧化物溅射的损害。在这里，针对氧化钨基透明电极的表面处理方法是通过用氧化铌对氧化钨表面进行轻微修饰来解决的。将此透明电极技术结合到保护性缓冲层中，可以将填充系数从70.4％恢复到80.3％，接近传统的不透明设备的填充系数值，这导致半透明钙钛矿太阳能电池的功率转换效率超过18％。演示了该方法在具有硅底部电池的四端子串联配置中的应用。