Correction: High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst,Journal of Materials Chemistry C

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Correction: High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst
Journal of Materials Chemistry C ( IF 6.4 ) Pub Date : 2020-04-02 , DOI: 10.1039/d0tc90064h
Fengyou Yang _{1,

2,

3,

4,

5} , Shengyao Chen _{1,

2,

3,

4,

5} , Huimin Feng _{1,

2,

3,

4,

5} , Cong Wang _{6,

7,

8,

9,

10} , Xiaofeng Wang _{1,

2,

3,

4,

5} , Shu Wang _{1,

2,

3,

4,

5} , Zhican Zhou _{1,

2,

3,

4,

5} , Bo Li _{1,

2,

3,

4,

5} , Lijun Ma _{1,

2,

3,

4,

5} , Haiguang Yang _{1,

2,

3,

4,

5} , Yong Xie _{11,

12,

13,

14} , Qian Liu _{1,

2,

3,

4,

5}

Affiliation

Correction for ‘High-performance optoelectronic memory based on bilayer MoS₂ grown by Au catalyst’ by Fengyou Yang et al., J. Mater. Chem. C, 2020, 8, 2664–2668.

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