This paper reports a comparative study of the analog performance, linearity and harmonic distortion characteristics between junctionless (JL) and conventional silicon-on-insulator (SOI) fin-type field-effect transistors (FinFETs) at elevated temperatures (300–500 K). A numerical device simulator is used for this study. Analog performance parameters of a JL FinFET are found to be less sensitive to variation in temperature as compared with its IM counterpart. Linearity is also found to be better for JL devices than IM devices for the entire temperature range. Moreover, harmonic distortion is found to be less for JL devices than IM devices.

中文翻译：

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无结和常规SOI FinFET在高温下的模拟性能，线性和谐波失真的相对研究

本文报告了在高温（300–500 K）下无结（JL）与常规绝缘体上硅（SOI）鳍式场效应晶体管（FinFET）之间的模拟性能，线性和谐波失真特性的比较研究。 。数值设备模拟器用于这项研究。与IM同类产品相比，发现JL FinFET的模拟性能参数对温度变化较不敏感。在整个温度范围内，JL器件的线性也优于IM器件。此外，发现JL设备的谐波失真小于IM设备。