Abstract Vanadium dioxide (VO2) is a well-known material for its semiconductor to metallic (SMT) phase change at 68 °C. Temperature controlled changes in optical, structural and electrical properties may lead to many applications in photonics, plasmonics and electronics. The present study explores vanadium oxide thin films growth by Pulsed-Laser Deposition and Rapid Thermal Annealing. 25 nm thick films are synthesized on various substrates, and analyzed by optical spectroscopy, ellipsometry, Raman, SEM and AFM. This work demonstrates the ability to reliably grow vanadium oxide with good phase change properties on amorphous and crystalline substrates, including TiO2 thin films useful for diffraction based optical applications. Thin films with transmittance shift in the order of 40% could be obtained with rapid thermal annealing temperature as low as 350 °C. It is shown that by modifying the annealing temperature, both the transition temperature and hysteresis parameters can be controlled, with however a strong influence of the substrate crystallinity. Transition temperatures as low as 52 °C and hysteresis width as small as 3 °C could be obtained.

中文翻译：

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通过脉冲激光沉积和快速热退火合成钒氧化物

摘要 二氧化钒 (VO2) 是一种众所周知的材料，其在 68 °C 下会发生半导体到金属 (SMT) 相变。光学、结构和电学特性的温度控制变化可能会导致光子学、等离子体学和电子学中的许多应用。本研究通过脉冲激光沉积和快速热退火探索氧化钒薄膜的生长。在各种基材上合成 25 nm 厚的薄膜，并通过光谱学、椭偏仪、拉曼、SEM 和 AFM 进行分析。这项工作证明了在非晶和晶体基材上可靠地生长具有良好相变特性的氧化钒的能力，包括用于基于衍射的光学应用的 TiO2 薄膜。通过低至 350 °C 的快速热退火温度，可以获得透射率偏移约为 40% 的薄膜。结果表明，通过修改退火温度，可以控制转变温度和滞后参数，但基板结晶度有很大影响。可以获得低至 52 °C 的转变温度和小至 3 °C 的滞后宽度。