Abstract In this work we have characterized screen-printed passivating contacts formed by different commercially available fire-through pastes on phosphorus doped (n+) polysilicon (poly-Si) layers at the rear side of monoPoly™ solar cells. Extremely low recombination current density under metal contacts (J01,metal) of 35–45 fA/cm2 and excellent specific contact resistivity (ρc) values of ~ 1.3 mΩ-cm2 are obtained for two different thicknesses of poly-Si (150 nm and 250 nm) used in this work. We demonstrate that, although the metal induced recombination increases with reducing thickness of the poly-Si layer, thinner poly-Si layers can lead to higher efficiencies on account of reduced parasitic absorption leading to higher cell current. A champion efficiency of 22.6% is reported for busbarless monoPoly™ cells with the best performing fire-through (FT) paste on large area (244.3 cm2) commercially available Czochralski grown Si wafers.

中文翻译：

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monoPoly™ 太阳能电池中基于 LPCVD 的钝化触点上的丝网印刷和烧穿触点的表征

摘要 在这项工作中，我们表征了由不同的市售烧穿浆料在 monoPoly™ 太阳能电池背面的磷掺杂 (n+) 多晶硅 (poly-Si) 层上形成的丝网印刷钝化触点。对于两种不同厚度的多晶硅（150 nm 和 250 nm）在这项工作中使用。我们证明，虽然金属诱导的复合随着多晶硅层厚度的减小而增加，但由于寄生吸收减少导致电池电流更高，因此更薄的多晶硅层可以导致更高的效率。冠军效率22。