Abstract The effect of balanced magnetron (BM) and unbalanced magnetron (UBM) configurations, in RF sputtering process, on the surface properties of SnO2 thin films has been investigated. X-ray photoelectron spectroscopy (XPS) Sn3d and O1s core spectra reveal that the films deposited at RF power of 250 W under BM configuration consist of Sn4+ oxidation states, while those deposited under UBM configuration consist of Sn4+ and Sn2+ oxidation states. This has been attributed to the migration of oxygen atoms from SnO2, resulting in the formation of Sn interstitial and oxygen vacancies. The contact angle (θ) recordings reveal that the UBM configuration results in more hydrophobic surface (140.6°) of SnO2 thin films than that under BM configuration (129.6°). Further, Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM) results indicate that the SnO2 thin films deposited under UBM configuration have better density with granular grains in comparison to that under BM configuration. The present studies establish the fact that magnetron configurations in sputtering process have significant impact on the surface properties of SnO2 thin films.

中文翻译：

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通过溅射工艺沉积的 SnO2 薄膜的磁控管配置依赖于表面特性

摘要 研究了平衡磁控管 (BM) 和非平衡磁控管 (UBM) 配置在射频溅射过程中对 SnO2 薄膜表面特性的影响。X 射线光电子能谱 (XPS) Sn3d 和 O1s 核心光谱显示，在 BM 配置下以 250 W 的射频功率沉积的薄膜由 Sn4+ 氧化态组成，而在 UBM 配置下沉积的薄膜由 Sn4+ 和 Sn2+ 氧化态组成。这归因于氧原子从 SnO2 迁移，导致形成 Sn 间隙和氧空位。接触角 (θ) 记录表明，UBM 配置导致 SnO2 薄膜的疏水表面 (140.6°) 比 BM 配置下的 (129.6°) 更高。更多，原子力显微镜 (AFM) 和场发射扫描电子显微镜 (FESEM) 结果表明，与 BM 配置相比，UBM 配置下沉积的 SnO2 薄膜具有更好的颗粒密度。目前的研究证实了溅射过程中的磁控管配置对 SnO2 薄膜的表面特性有显着影响的事实。