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Improvement in etching efficiency of borosilicate glass by dissolving internal silver precipitates
Precision Engineering ( IF 3.6 ) Pub Date : 2020-04-02 , DOI: 10.1016/j.precisioneng.2020.03.016
Hirofumi Kawamura , Souta Matsusaka , Kentaro Nomoto , Hiroki Kodaka , Hirofumi Hidai , Akira Chiba , Noboru Morita

Solid-state ion exchange with an applied voltage enables metal doping into alkali-silicate glass surfaces. The effect is especially prominent when silver is a dopant material, with additional voltage application producing silver nanowire networks in a glass substrate. We aimed to improve the wet etching efficiency of a glass substrate using internal networks as penetration paths of etchants. Silver precipitated glass when immersed in hydrofluoric acid (HF), allowing etchant infiltration via cracks around the nanowires. As a result, the silver-precipitated area was selectively dissolved, due to which blind/through-holes were formed with similar shapes. The etch rate (etched depth per unit time) of the silver-precipitated area was 1.9 μm/min, and was 3.3 times higher than that of the as-received glass (0.58 μm/min) in 20 wt% HF at 297 K.



中文翻译:

通过溶解内部银沉淀物提高硼硅酸盐玻璃的蚀刻效率

通过施加电压进行固态离子交换,可以将金属掺杂到碱金属硅酸盐玻璃表面中。当银是掺杂剂材料时,该效果尤为突出,另外施加电压会在玻璃基板中产生银纳米线网络。我们旨在使用内部网络作为蚀刻剂的渗透路径来提高玻璃基板的湿法蚀刻效率。当浸入氢氟酸(HF)中时,银会沉淀出玻璃,从而使蚀刻剂通过纳米线周围的裂缝渗透。结果,选择性地溶解了银沉淀区域,因此形成了类似形状的盲孔/通孔。银沉淀区域的蚀刻速率(每单位时间的蚀刻深度)为1.9μm/ min,是在297 K下在20 wt%HF中的原始玻璃(0.58μm/ min)的蚀刻速率的3.3倍。

更新日期:2020-04-02
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