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Colloidal Quantum-Dots/Graphene/Silicon Dual-Channel Detection of Visible Light and Short-Wave Infrared
ACS Photonics ( IF 7 ) Pub Date : 2020-04-01 , DOI: 10.1021/acsphotonics.0c00247
Xin Tang 1 , Menglu Chen 1 , Ananth Kamath 1 , Matthew M. Ackerman 1 , Philippe Guyot-Sionnest 1
Affiliation  

Integration of infrared detectors with current silicon-based imagers would not only extend their spectral sensing range, but also enables numerous applications including thermal imaging, machine vision, and spectrometers. Here, we report the development of a dual-channel photodetector by depositing a colloidal quantum dot (CQDs) infrared photodiode onto a graphene/p-silicon Schottky junction to provide simultaneous visible and infrared photoresponse channels. The HgTe photodiode is patterned into a semitransparent mesh structure with varying fill factors so that the visible light reaches the silicon substrate. The graphene/silicon Schottky junction has a responsivity of ∼0.9 A/W in the visible and the infrared CQDs photodiode has a detectivity of ∼5 × 109 Jones at 2.4 μm for a filling factor of 0.1.

中文翻译:

可见光和短波红外的胶体量子点/石墨烯/硅双通道检测

将红外探测器与当前基于硅的成像仪集成在一起,不仅可以扩展其光谱感应范围,而且还可以实现包括热成像,机器视觉和光谱仪在内的众多应用。在这里,我们通过将胶体量子点(CQDs)红外光电二极管沉积到石墨烯/ p硅肖特基结上以提供同时可见光和红外光响应通道,来报告双通道光电探测器的发展。将HgTe光电二极管构图成具有变化填充因子的半透明网状结构,以便可见光到达硅衬底。石墨烯/硅肖特基结在可见光下的响应度约为0.9 A / W,红外CQDs光电二极管在2.4μm的填充系数为0.1时的检测度约为5×10 9 Jones。
更新日期:2020-04-01
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